Nanoimprint lithography

ABSTRACT

A mold may include a plurality of nanostructures configured to form a lithographic pattern when imprinted into a material. Imprinting may include imprinting the mold a first predetermined distance, modifying a temperature of the material, and altering a position of the mold based on the temperature modification. One or more thermal elements may alter a temperature of a first section of the material and/or one or more nanostructures for a predetermined pulse time less than an equilibrium time required for the mold and/or material to reach a stable temperature state. A first thermal element may selectively alter the temperature of a first section of the material and/or a first nanostructure and a second thermal element may selectively alter the temperature of a second section of the material and/or a second nanostructure. The one or more thermal elements may include one or more thermoelectric elements.

If an Application Data Sheet (ADS) has been filed on the filing date ofthis application, it is incorporated by reference herein. Anyapplications claimed on the ADS for priority under 35 U.S.C. §§119, 120,121, or 365(c), and any and all parent, grandparent, great-grandparent,etc. applications of such applications, are also incorporated byreference, including any priority claims made in those applications andany material incorporated by reference, to the extent such subjectmatter is not inconsistent herewith.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is related to and/or claims the benefit of theearliest available effective filing date(s) from the following listedapplication(s) (the “Priority Applications”), if any, listed below(e.g., claims earliest available priority dates for other thanprovisional patent applications or claims benefits under 35 USC §119(e)for provisional patent applications, for any and all parent,grandparent, great-grandparent, etc. applications of the PriorityApplication(s)). In addition, the present application is related to the“Related Applications,” if any, listed below.

PRIORITY APPLICATIONS

None

RELATED APPLICATIONS

-   -   U.S. patent application Ser. No. ______, entitled NANOIMPRINT        LITHOGRAPHY, naming Roderick A. Hyde, Jordin T. Kare, and        Thomas A. Weaver as inventors, filed 3 Jan. 2013 with attorney        docket no. 0209-026-002-000000, is related to the present        application.    -   U.S. patent application Ser. No. ______, entitled NANOIMPRINT        LITHOGRAPHY, naming Roderick A. Hyde, Jordin T. Kare, and        Thomas A. Weaver as inventors, filed 3 Jan. 2013 with attorney        docket no. 0209-026-003-000000, is related to the present        application.

The United States Patent Office (USPTO) has published a notice to theeffect that the USPTO's computer programs require that patent applicantsreference both a serial number and indicate whether an application is acontinuation, continuation-in-part, or divisional of a parentapplication. Stephen G. Kunin, Benefit of Prior-Filed Application, USPTOOfficial Gazette Mar. 18, 2003. The USPTO further has provided forms forthe Application Data Sheet which allow automatic loading ofbibliographic data but which require identification of each applicationas a continuation, continuation-in-part, or divisional of a parentapplication. The present Applicant Entity (hereinafter “Applicant”) hasprovided above a specific reference to the application(s) from whichpriority is being claimed as recited by statute. Applicant understandsthat the statute is unambiguous in its specific reference language anddoes not require either a serial number or any characterization, such as“continuation” or “continuation-in-part,” for claiming priority to U.S.patent applications. Notwithstanding the foregoing, Applicantunderstands that the USPTO's computer programs have certain data entryrequirements, and hence Applicant has provided designation(s) of arelationship between the present application and its parentapplication(s) as set forth above and in any ADS filed in thisapplication, but expressly points out that such designation(s) are notto be construed in any way as any type of commentary and/or admission asto whether or not the present application contains any new matter inaddition to the matter of its parent application(s).

If the listings of applications provided above are inconsistent with thelistings provided via an ADS, it is the intent of the Applicant to claimpriority to each application that appears in the Priority Applicationssection of the ADS and to each application that appears in the PriorityApplications section of this application.

All subject matter of the Priority Applications and the RelatedApplications and of any and all parent, grandparent, great-grandparent,etc. applications of the Priority Applications and the RelatedApplications, including any priority claims, is incorporated herein byreference to the extent such subject matter is not inconsistentherewith.

TECHNICAL FIELD

This application relates to systems and methods for nanoimprinting alithographic pattern.

SUMMARY

A lithographic pattern may be formed on a material, such as a resist, byimprinting a mold with a plurality of nanostructures into the material.Imprinting may include imprinting the mold a first predetermineddistance, modifying a temperature of the material after imprinting thefirst predetermined distance, and adjusting a position of the mold aftermodifying the temperature of the material. The mold may be withdrawn andany residual resist can be removed. The desired processing can then beperformed on the exposed substrate.

A temperature of the mold and/or material may be modified usingtemporally and/or spatially localized temperature control. Temporallylocalized temperature control may include modifying a temperature of oneor more nanostructures and/or a section of the mold and/or material fora predetermined pulse time. The predetermined pulse time may be lessthan an equilibrium time required for the mold and/or material to reachthermal equilibrium. At thermal equilibrium, the mold and/or materialmay be in a stable temperature state.

Spatially localized control may include using multiple thermal elementsto selectively modify the temperature of corresponding nanostructuresand/or sections of the mold and/or material. The thermal elements mayinclude one or more thermoelectric elements. Thermoelectric elements maybe configured to deliver and/or remove heat based on the polarity of thevoltage applied to them. The thermoelectric elements may also be used todeliver thermal pulses, such as delivering heat with a first thermalpulse and removing heat with a second thermal pulse.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is cross-section view of steps in a method for imprinting alithographic pattern.

FIG. 2 is a cross-section view of a system for nanoimprinting alithographic pattern into a resist.

FIG. 3 is a top perspective view of a spatial temperature profile thatmay be created by a nanoimprint system.

FIG. 4 is a cross-section view of a system and a spatial temperatureprofile created in a resist by that system.

FIG. 5 is a graph of a temperature curve of the heating elements as afunction of time.

FIG. 6 is a cross-section view of a system for nanoimprinting alithographic pattern into a resist.

FIG. 7 is a schematic diagram of a system for nanoimprinting alithographic pattern into a resist.

FIG. 8 is a perspective view of a thermoelectric element configured todeliver and/or remove heat from a material.

FIG. 9A is a schematic diagram of the operation of the thermoelectricelement when coupled to a selectively operable power supply.

FIG. 9B is a schematic diagram of the operation of the thermoelectricelement when coupled to a selectively operable power supply.

FIG. 10 is a cross-section view of a system for nanoimprinting alithographic pattern into a resist.

FIG. 11 is a cross-section view of the system and a spatial temperatureprofile created in the resist by that system.

FIG. 12A is a cross-section view of arrangements of thermoelectricelements within molds.

FIG. 12B is a cross-section view of arrangements of thermoelectricelements within molds.

FIG. 13A is a graph of temperature curves for the thermoelectricelements.

FIG. 13B is a graph of temperature curves for the thermoelectricelements.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

Nanoimprint lithography includes various methods for producing alithographic pattern in a material. A mold may be formed that producesthe lithographic pattern when the mold is imprinted into the material.The mold may include a plurality of nanostructures that produce featureswith sizes on the order of nanometers or smaller when imprinted into thematerial. For example, the mold may be imprinted into a resist and/ormask. The resist and/or mask may be a liquid, a solid above a glasstransition temperature, or the like. Once the mold has been imprinted,the resist and/or mask may be cured with ultraviolet (UV) light and/orcooled below the glass transition temperature. After the mold isremoved, a thin layer of residual resist and/or mask material may remainwhere the pattern has been imprinted. This residual resist and/or maskmaterial may be removed by known etching techniques. Deposition and/oretching may then be performed on exposed portions of the substrate. Themold may be configured to pattern one or more transistor elements,elements of an information storage device, elements of a photonicdevice, components of an electromechanical system, and/or the like.Multiple elements and/or components may be combined to create atransistor, information storage device, photonic device,electromechanical system, or the like.

Imprinting the mold into the resist may include multiple steps. The moldmay be imprinted a first predetermined distance into the material usingan imprinting mechanism. During imprinting and/or after the mold isimprinted the first predetermined distance, a temperature of thematerial may be modified, such as with a thermal element. For example,the thermal element may begin modifying the temperature while the moldis being imprinted the first distance. After the temperature has beenmodified, a position of the mold may be adjusted based on thetemperature modification. In an embodiment, imprinting a firstpredetermined distance may include touching the surface of the materialwith the mold (e.g., the first predetermined distance may besubstantially zero). In another embodiment, the first predetermineddistance substantially equals a material depth. In another embodiment,the first predetermined distance corresponds to a modified temperaturedepth (e.g., the depth of material that has had its temperaturemodified).

Adjusting a position may include imprinting the mold a secondpredetermined distance, rotating the mold and/or at least onenanostructure to create an undercut in the material, withdrawing themold fully or partially from the material, and/or the like. The secondpredetermined distance may correspond to the modified temperature depth.The sum of the first predetermined distance and the second predetermineddistance may be less than the first predetermined distance. The sum ofthe first predetermined distance and the second predetermined distancemay substantially equal the material depth. The sum of the firstpredetermined distance and the second predetermined distance maysubstantially equal and/or correspond to the modified temperature depth.Adjusting a position based on the temperature modification may includeadjusting the position based on a predicted spatial temperature profile,based on a predicted spatial-temporal temperature profile, based onmeasurements from a sensor, and/or the like. The sensor measurements maybe used to determine a velocity and/or imprint force to use whenadjusting the position.

The temperature of the material may be further altered after theposition of the mold has been adjusted. The thermal element may beginfurther altering the temperature during adjusting of the position (e.g.,while the mold is being imprinted the second predetermined distance.)The thermal element may deliver heat when initially modifying thetemperature and remove heat during the further alteration of thetemperature. After the heat has been removed, the mold may be withdrawnfrom the material. The thermal element may be configured to deliver afirst predetermined amount of heat when initially modifying thetemperature and deliver a second predetermined amount of heat during thefurther alteration of the temperature. A property of the material may bemodified during the initial temperature modification and/or during thefurther alteration of the material.

Temperature control for nanoimprint lithography may be localizedspatially and/or temporally. In an embodiment, the temperature ofspatially localized areas of the material into which the mold is beingimprinted may be altered. For example, one or more thermal elements maybe configured to alter the temperature of a section of the materialsmaller than the whole material. Alternatively or in addition, thetemperature of specific nanostructures on the mold and/or a section ofthe mold smaller than the whole mold may be altered by the one or morethermal elements.

To achieve temporally localized temperature control, the temperature ofthe material and/or mold, such as the temperature of specificnanostructures and/or sections, may be altered for a predetermined pulsetime using the thermal element. Thermal diffusion may result in thematerial and/or mold reaching thermal equilibrium (i.e., a stabletemperature state) if the pulse time is long enough. Accordingly, thepredetermined pulse time may be selected to be less than an equilibriumtime required for the material and/or mold to reach thermal equilibrium.A spatial temperature profile may be created in the section of thematerial and/or mold based on the predetermined pulse time. A spatialprofile of material at a same temperature may be created based on thepredetermined pulse time. Accordingly, the pulse time may be selected tocreate a predetermined spatial temperature profile in the materialand/or mold and/or to create a predetermined spatial profile of materialat an operative temperature.

The pulse time may be selected to be less than an imprint time, selectedbased on a thermal diffusivity of the material and/or mold, and/or thelike. The thermal element may be configured to alter the temperature ofthe material and/or mold a plurality of times for a correspondingplurality of predetermined pulse times. The thermal element may delivera sequence of thermal pulses that deliver heat to or remove heat fromthe material and/or mold with each thermal pulse lasting for acorresponding predetermined pulse time. For example, the thermal elementmay deliver heat for a predetermined heating time and remove heat for apredetermined cooling time. The thermal element may be configured toremove heat during separation of the mold from the material. The thermalelement may be configured to deliver and/or remove a predeterminedamount of heat from the material and/or mold.

The thermal element may be positioned in a variety of locations. Thethermal element may be in direct contact with the substrate, or thethermal element may be in one of the plurality of nanostructures. Thethermal element may be thermally coupled to one or more of the pluralityof nanostructures. The thermal element may modify the temperature of thematerial by modifying a temperature of one of the plurality ofnanostructures. One or more of the plurality of nanostructures mayconduct thermal energy between the thermal element and the section ofthe material and/or mold. When the thermal element is configured toalter the temperature of a section of the material, one or morenanostructures may be configured to imprint in that section and/orwithin a predetermined diffusion distance of that section.

Multiple sections of the material and/or mold may have their temperaturealtered by thermal elements. For example, a first thermal element mayalter a first temperature of a first nanostructure and/or a firstsection of the material and/or mold, and a second thermal element mayalter a second temperature of a second nanostructure and/or a secondsection of the material and/or mold. The thermal elements may beconfigured and/or positioned to create a predetermined spatialtemperature profile in the material and/or mold and/or a predeterminedspatial profile of material at an operative temperature. Under oneconfiguration, the first thermal element may deliver heat to the firstsection and/or nanostructure, and the second thermal element may removeheat from the second section and/or nanostructure. In anotherconfiguration, the first thermal element may deliver a firstpredetermined amount of heat to the first section and/or nanostructure,and the second thermal element may deliver a second predetermined amountof heat to the second section and/or nanostructure.

Various thermal elements may be used to alter the temperature of thematerial and/or mold. A photoirradiation unit may include one or morethermal elements. The photoirradiation unit may be configured togenerate a first pixel of radiation on the first section of the materialand/or mold and a second pixel of radiation on the second section of thematerial and/or mold. The mold may include a first portion with a firsttransparency and a second portion with a second transparency to generatethe first and second pixels. A cooling element may cool the materialand/or mold while the first and second pixels are generated on thematerial and/or mold. The mold may be substantially and/or entirelytransparent to radiation from the photoirradiation unit.

The thermal element may include a heating element, such as a resistiveheating element, a photoheating element, and/or the like. Thephotoheating element may be configured to emit UV light, x-rays, and/orthe like. The mold may be substantially or entirely transparent to theradiation from the photoheating element. A cooling element may beconfigured to cool the material and/or mold while the heating elementheats the first nanostructure and/or the first section of the materialand/or mold. The thermal element may include a cooling element. Thecooling element may include a thermally conductive fluid, such as water.The cooling element may include a heat sink. The heat sink may beconfigured to change phase, such as by melting and/or vaporizing. Aheating element may be configured to heat the material and/or mold whilethe cooling element removes heat from the first nanostructure and/or thefirst section of the material and/or mold. Heating elements and coolingelements may be separated from one another by thermal insulation.

The thermal element may include a thermoelectric element. Athermoelectric element may be configured to deliver heat to the firstnanostructure and/or the first section when a voltage with a firstpolarity is applied and may be configured to remove heat from the firstnanostructure and/or the first section when a voltage with a secondpolarity is applied. The thermoelectric element may heat the firstnanostructure and/or the first section for a first time period and coolthe first nanostructure and/or the first section for a second timeperiod. The thermoelectric element and a heating and/or cooling elementmay be configured to alter the temperature of the material and/or mold.The thermoelectric element may be configured to alter a firsttemperature of the first nanostructure and/or the first section of thematerial and/or mold and the heating and/or cooling element may beconfigured to alter a temperature of the remainder of the materialand/or mold and/or the other of the material and the mold. A firstthermoelectric element may be configured to alter the first temperatureof the first nanostructure and/or the first section, and a secondthermoelectric element may be configured to alter a material temperatureof the material and/or a second temperature of the second nanostructureand/or the second section. Thermoelectric elements may be separated fromeach other, from heating elements, and/or from cooling elements bythermal insulation.

The thermoelectric element may be made from doped semiconductors. Afirst doped semiconductor may include excess electron holes, and asecond doped semiconductor may include excess electrons. First andsecond conductors may couple the first and second doped semiconductorsrespectively to a selectively operable power source. The selectivelyoperable power source may be configured to selectively apply the firstor second polarity to the thermoelectric element depending on whetherheat should be delivered or removed. A third conductor may couple thefirst doped semiconductor to the second doped semiconductor. The firstand second conductors and/or the third conductor may be configured todeliver and remove the heat from the material and/or mold.

One or more sensors may be configured to acquire time dependentmeasurements of properties of the material and/or mold. Sensors maymeasure the temperature of the material and/or mold, an optical propertyof the material and/or mold, an electrical property of the materialand/or mold, and/or the like. The predetermined pulse time may beselected based on the time dependent measurements. The first and/orsecond thermal element may be configured to selectively alter the firstand/or second temperature based on feedback from the sensor and/or basedon the time dependent measurements. When to start and/or stop imprintingand/or removing the mold may be determined based on the time dependentmeasurements.

When imprinting the mold into the material, the imprint depth may equalthe depth of the material. Alternatively, the imprint depth maysubstantially equal the depth of the material. For example, the imprintdepth may be selected to leave a thin layer of material where thepattern has been imprinted. To create a desired spatial temperatureprofile, the material may include a first substance with a first thermaldiffusivity and a second substance with a second thermal diffusivity. Asingle thermal element may alter the temperature of the first and secondsubstances, and/or each substance may have a corresponding thermalelement configured to alter a temperature of that substance. A first ofthe plurality of nanostructures may be configured to imprint in thefirst substance, and a second of the plurality of nanostructures may beconfigured to imprint in the second substance.

The mold may imprint into various materials. The mold may imprint into aresist. The resist may include a mask, a monomer, a polymer, such as athermoplastic polymer, a liquid curable under UV light, and/or the like.The mold may imprint into the substrate. The substrate may includesilicon, silicon dioxide, and/or the like. The thermal element may beconfigured to modify a property of the substrate. The thermal elementmay modify a chemical property, such as by causing decomposition of asubstrate element, by causing a reaction between two elements on thesubstrate, by crosslinking two elements on the substrate, and/or thelike. The thermal element may modify a physical property, such as bychanging a viscosity of the substrate, changing a strength of thesubstrate, changing a phase of the substrate, and/or the like.

FIG. 1 is cross-section view of steps 102, 103, 104, 106, 108 in amethod 100 for imprinting a lithographic pattern. First, a mold 110including a plurality of nanostructures 112 configured to create thelithographic pattern and a substrate 120 with a layer of resist 130 maybe provided 102. The resist 130 may be an UV curable liquid and/or amaterial above its glass-transition temperature. The resist 130 may beheated above its glass-transition temperature during step 102. The mold110 may be attached to an imprinting mechanism 115. The imprintingmechanism 115 may imprint 103 the mold 110 a first predetermineddistance into the resist 130. After or during imprinting 103, the resist130 may be further heated and/or cooled. In some embodiments, step 103may be omitted.

The imprinting mechanism 115 may imprint 104 the mold 110 a secondpredetermined distance into the resist 130. After or during imprinting104 the second predetermined distance, the resist 130 may be UV curedand/or cooled below its glass-transition temperature. Alternatively orin addition, the temperature of the resist 130 and/or the substrate 120may be altered to modify a chemical and/or physical property of theresist 130 and/or the substrate 120. Next, the mold 110 may be removed106 from the resist 130. A thin layer of resist 132 may remain where thepattern was imprinted. Etching 108 may remove the thin layer of resist132 leaving the substrate 120 exposed for the desired processing.

FIG. 2 is a cross-section view of a system 200 for nanoimprinting alithographic pattern into a resist 230. A mold 210 may include aplurality of nanostructures 212 and a plurality of heating elements 214configured to heat the plurality of nanostructures 212. The plurality ofheating elements 214 may include a plurality of resistive heatingelements. A cooling element 240 may be in thermal contact with asubstrate 220. The cooling element 240 may include a plurality of ports242 to circulate thermally conductive fluid 244 and thereby to removeheat from the substrate 220. The thermally conductive fluid 244 may becirculated to a heat sink (not shown) or the like to remove excess heatfrom the thermally conductive fluid 244. A plurality of temperaturesensors 250 may detect the temperature of the resist 230. The positionsof the heating elements 214 and cooling element 240 as well as theamount of heat delivered and removed by those elements may be selectedto create a predetermined spatial temperature profile in the resist 230.

FIG. 3 is a top perspective view of a spatial temperature profile 300that may be created by a nanoimprint system similar to the nanoimprintsystem 200. The spatial temperature profile may include a plurality ofregions 310, 312, 314, 316, 318, 320, each at a same temperature. Theregion 310 in contact with the nanostructures 212 may be at a hottesttemperature and therefore most deformable. The region 320 furthest fromthe nanostructures 212 may be at a coldest temperature and thereforeleast deformable. Accordingly, the mold 210 may leave a pattern in theregion 310 in contact with the nanostructures 212 without undulydamaging and/or deforming the region 320 furthest from thenanostructures 212.

FIG. 4 is a cross-section view of a system 400 and a spatial temperatureprofile 460 created in a resist 430 by that system 400. The spatialtemperature profile 460 includes a plurality of regions 462, 464, 466,488, 470, each at a same temperature. A mold 410 may include heatednanostructures 412 that conduct heat to the resist 430. A hottest region462 may be in contact with the nanostructures 412. A cooling element 440may remove heat from a substrate 420. Thus, a coolest region 470 may bein contact with the substrate 420. In one embodiment, the heat may bedelivered via the nanostructures 412 at the same time that heat isremoved by the cooling element 440. For example, the heat deliveredthrough the nanostructures 412 may increase the deformability of nearbyresist, while the cooling element 440 increases structural stability ofresist in gaps between the nanostructures 412. Alternatively or inaddition, the cooling element 440 may cool the resist 430 below itsglass-transition temperature after heat is no longer being delivered, sothe mold 410 can be withdrawn.

FIG. 5 is a graph 500 of a temperature curve 510 of the heating elements214 as a function of time. The graph 500 has a temperature axis 512 anda time axis 514. During an insertion time 520, the heating elements 214may deliver a first predetermined amount of heat to the resist 230. Forexample, the heating elements 214 may activate for a predetermined pulsetime, which may be longer than the insertion time 520. The firstpredetermined amount of heat may be selected to soften the resist 230sufficiently for the mold 210 to imprint in the resist 230. Afterinsertion, the heating elements 214 may cease delivering heat, and theresist 230 may be cooled and hardened by the cooling element 240. Oncethe resist 230 has hardened, the heating elements 214 may deliver asecond predetermined amount of heat during a removal time 530. Thesecond predetermined amount of heat may be selected to soften the resist230 sufficiently for the mold 210 to be separated from the resist 230without causing damage to the lithographic pattern. The secondpredetermined amount of heat may be selected not to soften the resist230 so much as to dissolve the lithographic pattern.

FIG. 6 is a cross-section view of a system 600 for nanoimprinting alithographic pattern into a resist 630. A mold 610 may include aplurality of nanostructures 612 configured to imprint in a first area631 and a second area 632 of the resist 630 while not imprinting inthird area 633. A heating and cooling mechanism 640 may be in contactwith a substrate 620. The heating and cooling mechanism may includeresistive heating elements 642 configured to deliver heat to the firstand second areas 631, 632 and a cooling element 644 configured to removeheat from the third area 633. As a result, the first and second areas631, 632 may be above the glass-transition temperature to allow forimprinting while the third area 633 may be below the glass-transitiontemperature to prevent undesirable deformation. The heating and coolingelements 642, 644 may be thermally insulated from each other byinsulation 645. The mold 610 may include a plurality of sensors 650. Theplurality of sensors 650 may be configured to indirectly measuretemperatures of the first, second, and third areas 631, 632, 633. Theheating and cooling mechanism 640 may be configured to adjust the amountof heat delivered and/or removed based on feedback from the sensors 650.

FIG. 7 is a schematic diagram of a system 700 for nanoimprinting alithographic pattern into a resist 730. The system 700 may include aphotoirradiation unit 714 configured to heat the resist 730 bydelivering electromagnetic radiation, such as UV light, x-rays, and/orthe like, to the resist 730. Alternatively or in addition, the resist730 may be a UV curable liquid. A mold 710 imprinting into the resist730 may include first regions 715 with a first transparency and secondregions 716 with a second transparency. The first and second regions715, 716 may thus allow different amounts of heat to be delivered todifferent sections of the resist 730. In the illustrated embodiment, thefirst region 715 may include a plurality of nanostructures 712 and maybe configured to allow through most or all of the radiation. The secondregion 716 may include the gaps between the nanostructures 712 and maybe configured to block most or all of the radiation. Thus, resist nearthe nanostructures 712 may be above the glass-transition temperature andeasily deformable while resist near the gaps may be below theglass-transition temperature and not easily deformable. In otherembodiments, such as when the resist 730 is UV curable, the first region715 may block most or all radiation while the second region 716 allowsthrough most or all radiation. In other embodiments, the system maycontain multiple, independently operable photoirradiation units. In someembodiments, local photoirradiation units (e.g., LEDs, quantum dots,plasmonic resonators, or the like) may be incorporated into thenanostructures.

FIG. 8 is a perspective view of a thermoelectric element 800 configuredto deliver and/or remove heat from a material (not shown). Thethermoelectric element 800 may include one or more doped semiconductors.A first semiconductor 810 may include p-type doping (i.e., may includeexcess electron holes), and a second semiconductor 820 may includen-type doping (i.e., may include excess electrons). A first conductor830 may be directly coupled to the first semiconductor 810, a secondconductor 840 may be directly coupled to the second semiconductor 820,and a third conductor 850 may be directly coupled to the first andsecond semiconductors 810, 820. The first and second conductors 830, 840may be directly coupled and/or wired to a power supply 860.

FIGS. 9A,B are schematic diagrams of the operation of the thermoelectricelement 800 when coupled to a selectively operable power supply 960. Theselectively operable power supply 960 may apply a voltage with a firstpolarity 961 to pump heat to the third conductor 850 from the first andsecond conductors 830, 840 and apply a voltage with a second polarity962 to pump heat from the third conductor 850 to the first and secondconductors 830, 840. Thus, the third conductor 850 and/or the first andsecond conductors 830, 840 may be able to remove and deliver heat to amaterial based on the polarity applied by the selectively operable powersupply 960.

FIG. 10 is a cross-section view of a system 1000 for nanoimprinting alithographic pattern into a resist 1030. A mold 1010 may include aplurality of nanostructures 1012 and mold thermoelectric elements 1014configured to alter a temperature of the mold 1010 and/or nanostructures1012. The resist 1030 may be atop a substrate 1020, and a substratethermoelectric element 1040 may be configured to alter a temperature ofthe substrate 1020. The thermoelectric elements 1014, 1040 may beconfigured to deliver heat and/or remove heat from the mold 1010 andsubstrate 1020. When the resist 1030 is in thermal contact with the mold1010 and/or substrate 1020, a temperature of the resist 1030 may bemodified by the thermoelectric elements 1014, 1040 as well.

FIG. 11 is a cross-section view of the system 1000 and a spatialtemperature profile 1160 created in the resist 1030 by that system 1000.The mold thermoelectric elements 1014 may be configured to deliver heatto the resist 1030 while the substrate thermoelectric element 1040removes heat from the resist 1030. The mold thermoelectric elements 1014may be positioned near the nanostructures 1012 while the substratethermoelectric element 1040 may be positioned near an area of the resist1030 where the nanostructures 1012 are not imprinted. Under such aconfiguration, the mold thermoelectric elements 1014 may heat a sectionof the resist 1030 so that it may be deformed by the nanostructures 1012while the substrate thermoelectric element 1040 cools and maintains thestructural stability of the area of the resist 1030 where thenanostructures 1012 are not imprinted. A plurality of regions 1162,1164, 1166, 1168, 1170, 1172, each at a same temperature, may resultwith the hottest region 1162 nearest the mold thermoelectric elements1014 and the coldest region 1172 nearest the substrate thermoelectricelement 1040. Alternatively or in addition, one or more of thethermoelectric elements 1014, 1040 may deliver heat to the resist 1030during a first time period and remove heat from the resist 1030 during asecond time period.

FIGS. 12A,B are cross-section views of arrangements of thermoelectricelements 1214 a,b, 1215 a,b within molds 1210 a,b. A first mold 1210 amay include nanostructures 1212 a, 1213 a with different heights.Accordingly, a first thermoelectric element 1214 a may alter thetemperature of a longer nanostructure 1212 a, and a secondthermoelectric element 1215 a may alter the temperature of a shorternanostructure 1213 a. A control unit 1260 a may be configured toselectively alter the temperature of the thermoelectric elements 1214 a,1215 a by determining a magnitude and polarity of a voltage delivered toeach thermoelectric element 1214 a, 1215 b. Similarly, a second mold1210 b may include a nanostructure 1212 b and a gap 1213 b without ananostructure. A first thermoelectric element 1214 b may alter thetemperature of the nanostructure 1212 b, and a second thermoelectricelement 1215 b may alter the temperature of the gap 1213 b. A controlunit 1260 b may be configured to select a polarity and magnitude of avoltage delivered to each thermoelectric element 1214 b, 1215 b.

FIGS. 13A,B are graphs 1300 a,b of temperature curves 1310 a,b, 1311 a,bfor the thermoelectric elements 1214 a,b, 1215 a,b. The graphs 1300 a,binclude temperature 1312 a,b and time 1314 a,b axes. Temperature curve1310 a may be a temperature curve for the first thermoelectric element1214 a during imprinting of the mold 1210 a, and temperature curve 1311a may be a temperature curve for the second thermoelectric element 1215a. Prior to an insertion time 1320 a, the temperature of the firstthermoelectric element 1214 a may begin increasing rapidly andsignificantly. The temperature of the second thermoelectric element 1215a may not begin increasing until after insertion and may increase lessrapidly and less significantly. At the end of the insertion time 1320 a,the temperature of the thermoelectric elements 1214 a, 1215 a maydecrease until the thermoelectric elements 1214 a, 1215 a are removingheat from the nanostructures 1212 a, 1213 a. During a removal time 1330a, the thermoelectric elements 1214 a, 1215 a may remain at the coolertemperature.

Temperature curve 1310 b may be a temperature curve for the firstthermoelectric element 1214 b during imprinting of the mold 1210 b, andtemperature curve 1311 b may be a temperature curve for the secondthermoelectric element 1215 b. Prior to an insertion time 1320 b, thefirst thermoelectric element 1214 b may begin heating the nanostructure1212 b, and the second thermoelectric element 1215 b may begin coolingthe gap 1213 b. At the end of the insertion time 1320 b, the firstthermoelectric element 1214 b may begin cooling the nanostructure 1212b, and the second thermoelectric element 1215 b may be allowed to returnto thermal equilibrium. During a removal time 1330 b, the firstthermoelectric element 1214 b may continue to cool the nanostructure1212 b, and the second thermoelectric element 1215 b may continue toreturn to thermal equilibrium.

It will be understood by those having skill in the art that many changesmay be made to the details of the above-described embodiments withoutdeparting from the underlying principles of the disclosure. The scope ofthe present disclosure should, therefore, be determined only by thefollowing claims.

1. A system for nanoimprinting a lithographic pattern into a material, the system comprising: a mold comprising a plurality of nanostructures, wherein the plurality of nanostructures are configured to form the lithographic pattern when imprinted into the material; and a first thermal element configured to alter a temperature of a first section of the material smaller than the whole material for a predetermined pulse time, wherein the predetermined pulse time is selected to be less than an equilibrium time for the material to reach thermal equilibrium.
 2. The system of claim 1, wherein a spatial temperature profile of the first section is based on the predetermined pulse time.
 3. The system of claim 1, wherein a spatial profile of material at a same temperature value is based on the predetermined pulse time.
 4. The system of claim 1, wherein a material depth of the first section substantially equals an imprint depth of the mold.
 5. The system of claim 1, wherein at least one nanostructure is configured to imprint in the first section.
 6. The system of claim 1, wherein at least one nanostructure is configured to imprint within a predetermined diffusion distance of the first section.
 7. The system of claim 1, wherein the predetermined pulse time is less than an imprint time.
 8. The system of claim 1, wherein the predetermined pulse time is selected based on a thermal diffusivity of the material.
 9. The system of claim 1, further comprising a sensor configured to acquire time dependent measurements of a property of the material.
 10. The system of claim 9, wherein the first thermal element is configured to select the predetermined pulse time based on the time dependent measurements.
 11. The system of claim 9, wherein the sensor is configured to measure the temperature of the material.
 12. The system of claim 9, wherein the sensor is configured to monitor an optical property of the material.
 13. The system of claim 9, wherein the sensor is configured to monitor an electrical property of the material.
 14. The system of claim 1, wherein one of the plurality of nanostructures comprises the first thermal element.
 15. The system of claim 1, wherein the first thermal element is thermally coupled to at least one of the plurality of nanostructures.
 16. The system of claim 1, wherein at least one of the plurality of nanostructures is configured to conduct thermal energy between the first thermal element and the first section of the material.
 17. The system of claim 1, wherein the first thermal element is configured to alter the temperature of the first section a plurality of times for a corresponding plurality of predetermined pulse times.
 18. The system of claim 1, wherein the first thermal element is configured to deliver a sequence of thermal pulses, wherein each thermal pulse delivers heat to or removes heat from the first section, and wherein each thermal pulse lasts for a corresponding predetermined pulse time.
 19. The system of claim 18, wherein the first thermal element is configured to: deliver heat for a predetermined heating time; and remove heat for a predetermined cooling time.
 20. The system of claim 19, wherein the first thermal element is configured to remove heat from the first section during separation of the mold from the material.
 21. The system of claim 1, wherein the predetermined pulse time is selected to create a predetermined spatial temperature profile in the material.
 22. The system of claim 1, wherein the predetermined pulse time is selected to create a predetermined spatial temperature profile in the mold.
 23. The system of claim 1, wherein the predetermined pulse time is selected to create a predetermined spatial profile of material at an operative temperature.
 24. The system of claim 1, wherein the first thermal element is configured to deliver a predetermined amount of heat to the first section.
 25. The system of claim 1, wherein the first thermal element is configured to remove a predetermined amount of heat from the first section.
 26. The system of claim 1, further comprising a second thermal element configured to alter a temperature of a second section of the material smaller than the whole material.
 27. The system of claim 26, wherein the first and second thermal elements are configured to create a predetermined spatial temperature profile in the material.
 28. The system of claim 26, wherein the first and second thermal elements are configured to create a predetermined spatial temperature profile in the mold.
 29. The system of claim 26, wherein the first thermal element is configured to deliver heat to the first section, and wherein the second thermal element is configured to remove heat from the second section.
 30. The system of claim 26, wherein the first thermal element is configured to deliver a first predetermined amount of heat to the first section, and wherein the second thermal element is configured to deliver a second predetermined amount of heat to the second section.
 31. The system of claim 30, wherein a photoirradiation unit comprises the first and second thermal elements.
 32. The system of claim 31, wherein the first thermal element is configured to generate a first pixel of radiation on the material and the second thermal element is configured to generate a second pixel of radiation on the material.
 33. The system of claim 32, wherein the first thermal element comprises a first portion of the mold with a first transparency and the second thermal element comprises a second portion of the mold with a second transparency.
 34. The system of claim 32, further comprising a cooling element configured to cool the material while the first and second pixels of radiation are produced on the material.
 35. The system of claim 31, wherein the mold is transparent to radiation from the photoirradiation unit.
 36. The system of claim 1, wherein the first thermal element comprises a heating element.
 37. The system of claim 36, wherein the heating element comprises a resistive heating element.
 38. The system of claim 36, wherein the heating element comprises a photoheating element.
 39. The system of claim 38, wherein the photoheating element comprises an ultraviolet light emitting element.
 40. The system of claim 38, wherein the photoheating element comprises an x-ray emitting element.
 41. The system of claim 38, wherein the mold is transparent to radiation from the photoheating element.
 42. The system of claim 36, further comprising a cooling element configured to cool the material while the heating element heats the first section.
 43. The system of claim 1, wherein the first thermal element comprises a cooling element.
 44. The system of claim 43, wherein the cooling element comprises a thermally conductive fluid.
 45. The system of claim 44, wherein the thermally conductive fluid comprises water.
 46. The system of claim 43, wherein the cooling element further comprises a heat sink.
 47. The system of claim 46, wherein the heat sink is configured to change phase.
 48. The system of claim 47, wherein the heat sink is configured to melt.
 49. The system of claim 47, wherein the heat sink is configured to vaporize.
 50. The system of claim 43, further comprising insulation, wherein the insulation thermally insulates the cooling element from a heating element.
 51. The system of claim 43, further comprising a heating element configured to heat the material while the cooling element removes heat from the first section.
 52. The system of claim 1, wherein the first thermal element comprises a thermoelectric element.
 53. The system of claim 52, wherein the thermoelectric element is configured to heat the first section of the material.
 54. The system of claim 52, wherein the thermoelectric element is configured to cool the first section of the material.
 55. The system of claim 52, wherein the thermoelectric element is configured to heat the first section of the material for a first time period and cool the first section of the material for a second time period.
 56. The system of claim 52, wherein the thermoelectric element comprises a first semiconductor.
 57. The system of claim 56, wherein the thermoelectric element comprises a first doped semiconductor.
 58. The system of claim 57, wherein the thermoelectric element comprises a second doped semiconductor comprising excess electrons, and wherein the first doped semiconductor comprises excess electron holes.
 59. The system of claim 58, wherein the thermoelectric element further comprises: a first conductor coupled to the first doped semiconductor and a selectively operable power source; a second conductor coupled to the second doped semiconductor and the selectively operable power source; and a third conductor coupled to the first doped semiconductor and the second doped semiconductor.
 60. The system of claim 59, wherein the selectively operable power source is configured to deliver power with a first polarity to heat the thermoelectric element and to deliver power with a second polarity to cool the thermoelectric element.
 61. The system of claim 1, wherein the material comprises a resist.
 62. The system of claim 61, wherein the material comprises a mask.
 63. The system of claim 61, wherein the resist comprises a monomer.
 64. The system of claim 61, wherein the resist comprises a polymer.
 65. The system of claim 64, wherein the resist comprises a thermoplastic polymer.
 66. The system of claim 61, wherein the resist comprises a liquid curable under ultraviolet light.
 67. The system of claim 1, wherein the material comprises a substrate.
 68. The system of claim 67, wherein the substrate comprises silicon.
 69. The system of claim 67, wherein the substrate comprises silicon dioxide.
 70. The system of claim 67, wherein the first thermal element is further configured to modify a chemical property of the substrate.
 71. The system of claim 70, wherein the first thermal element is configured to cause decomposition of a substrate element.
 72. The system of claim 70, wherein the first thermal element is configured to cause a reaction between two elements on the substrate.
 73. The system of claim 70, wherein the first thermal element is configured to crosslink two elements on the substrate.
 74. The system of claim 67, wherein the first thermal element is configured to modify a physical property of the substrate.
 75. The system of claim 74, wherein the first thermal element is configured to change a viscosity of the substrate.
 76. The system of claim 74, wherein the first thermal element is configured to change a strength of the substrate.
 77. The system of claim 74, wherein the first thermal element is configured to change a phase of the substrate.
 78. The system of claim 1, wherein the mold is configured to pattern at least one transistor element.
 79. The system of claim 1, wherein the mold is configured to pattern at least one element of an information storage device.
 80. The system of claim 1, wherein the mold is configured to pattern at least one element of a photonic device.
 81. The system of claim 1, wherein the mold is configured to pattern at least one component of an electromechanical system.
 82. A system for nanoimprinting a lithographic pattern into a material, the system comprising: a mold comprising a plurality of nanostructures, wherein the plurality of nanostructures are configured to form the lithographic pattern when imprinted into the material; and a plurality of thermal elements comprising: a first thermal element configured to selectively alter a first temperature of a first nanostructure; and a second thermal element configured to selectively alter a second temperature of a second nanostructure.
 83. The system of claim 82, further comprising a sensor configured to acquire time dependent measurements of a property of the material.
 84. The system of claim 83, wherein the first thermal element is configured to selectively alter the first temperature based on feedback from the sensor.
 85. The system of claim 83, wherein the sensor is configured to measure the temperature of the material.
 86. The system of claim 83, wherein the sensor is configured to monitor an optical property of the material.
 87. The system of claim 83, wherein the sensor is configured to monitor an electrical property of the material.
 88. The system of claim 82, wherein the first nanostructure comprises the first thermal element.
 89. The system of claim 82, wherein the first thermal element is thermally coupled to the first nanostructure.
 90. The system of claim 82, wherein the first nanostructure is configured to conduct thermal energy between the first thermal element and the material.
 91. The system of claim 82, wherein the first thermal element is configured to alter the first temperature of the first nanostructure for a predetermined pulse time.
 92. The system of claim 91, wherein the predetermined pulse time is selected based on a thermal diffusivity of the material.
 93. The system of claim 92, wherein the predetermined pulse time is selected to be less than an equilibrium time for the material to reach thermal equilibrium.
 94. The system of claim 91, wherein the first thermal element is configured to alter the first temperature of the first nanostructure a plurality of times for a corresponding plurality of predetermined pulse times.
 95. The system of claim 91, wherein the first thermal element is configured to deliver a sequence of thermal pulses, wherein each thermal pulse delivers heat to or removes heat from the first nanostructure, and wherein each thermal pulse lasts for a corresponding predetermined pulse time.
 96. The system of claim 95, wherein the first thermal element is configured to: deliver heat for a predetermined heating time; and remove heat for a predetermined cooling time.
 97. The system of claim 96, wherein the first thermal element is configured to remove heat from the first nanostructure during separation of the mold from the material.
 98. The system of claim 91, wherein the predetermined pulse time is selected to create a predetermined spatial temperature profile.
 99. The system of claim 82, wherein the plurality of thermal elements are positioned to create a predetermined spatial temperature profile.
 100. The system of claim 82, wherein the first thermal element is configured to deliver a predetermined amount of heat to the first nanostructure.
 101. The system of claim 82, wherein the first thermal element is configured to remove a predetermined amount of heat from the first nanostructure.
 102. The system of claim 82, wherein the first thermal element is configured to deliver heat to the first nanostructure, and wherein the second thermal element is configured to remove heat from the second nanostructure.
 103. The system of claim 82, wherein the first thermal element is configured to deliver a first predetermined amount of heat to the first nanostructure, and wherein the second thermal element is configured to deliver a second predetermined amount of heat to the second nanostructure.
 104. The system of claim 103, wherein the material comprises a first substance with a first thermal diffusivity and a second substance with a second thermal diffusivity.
 105. The system of claim 104, wherein the first nanostructure is configured to imprint in the first substance and the second nanostructure is configured to imprint in the second substance.
 106. The system of claim 103, wherein a photoirradiation unit comprises the plurality of thermal elements, and wherein the first thermal element is configured to generate a first pixel of radiation and the second thermal element is configured to generate a second pixel of radiation.
 107. The system of claim 82, wherein the first thermal element comprises a heating element.
 108. The system of claim 107, wherein the heating element comprises a resistive heating element.
 109. The system of claim 107, wherein the heating element comprises a photoheating element.
 110. The system of claim 109, wherein the photoheating element comprises an ultraviolet light emitting element.
 111. The system of claim 109, wherein the photoheating element comprises an x-ray emitting element.
 112. The system of claim 109, wherein the mold is transparent to radiation from the photoheating element.
 113. The system of claim 107, further comprising a cooling element configured to cool the material while the heating element heats the first nanostructure.
 114. The system of claim 82, wherein the first thermal element comprises a cooling element.
 115. The system of claim 114, wherein the cooling element comprises a thermally conductive fluid.
 116. The system of claim 115, wherein the thermally conductive fluid comprises water.
 117. The system of claim 114, wherein the cooling element further comprises a heat sink.
 118. The system of claim 117, wherein the heat sink is configured to change phase.
 119. The system of claim 118, wherein the heat sink is configured to melt.
 120. The system of claim 118, wherein the heat sink is configured to vaporize.
 121. The system of claim 114, further comprising insulation, wherein the insulation thermally insulates the cooling element from a heating element.
 122. The system of claim 114, further comprising a heating element configured to heat the material while the cooling element removes heat from the first nanostructure.
 123. The system of claim 82, wherein the first thermal element comprises a thermoelectric element.
 124. The system of claim 123, wherein the thermoelectric element is configured to heat the first nanostructure.
 125. The system of claim 123, wherein the thermoelectric element is configured to cool the first nanostructure.
 126. The system of claim 123, wherein the thermoelectric element is configured to heat the first nanostructure for a first time period and cool the first nanostructure for a second time period.
 127. The system of claim 123, wherein the thermoelectric element comprises a first semiconductor.
 128. The system of claim 127, wherein the thermoelectric element comprises a first doped semiconductor.
 129. The system of claim 128, wherein the thermoelectric element comprises a second doped semiconductor comprising excess electrons, and wherein the first doped semiconductor comprises excess electron holes.
 130. The system of claim 129, wherein the thermoelectric element further comprises: a first conductor coupled to the first doped semiconductor and a selectively operable power source; a second conductor coupled to the second doped semiconductor and the selectively operable power source; and a third conductor coupled to the first doped semiconductor and the second doped semiconductor.
 131. The system of claim 130, wherein the selectively operable power source is configured to deliver power with a first polarity to heat the thermoelectric element and to deliver power with a second polarity to cool the thermoelectric element.
 132. The system of claim 82, wherein the material comprises a resist.
 133. The system of claim 132, wherein the material comprises a mask.
 134. The system of claim 132, wherein the resist comprises a monomer.
 135. The system of claim 132, wherein the resist comprises a polymer.
 136. The system of claim 135, wherein the resist comprises a thermoplastic polymer.
 137. The system of claim 132, wherein the resist comprises a liquid curable under ultraviolet light.
 138. The system of claim 82, wherein the material comprises a substrate.
 139. The system of claim 138, wherein the substrate comprises silicon.
 140. The system of claim 138, wherein the substrate comprises silicon dioxide.
 141. The system of claim 138, wherein the plurality of thermal elements are further configured to modify a chemical property of the substrate.
 142. The system of claim 141, wherein the plurality of thermal elements are configured to cause decomposition of a substrate element.
 143. The system of claim 141, wherein the plurality of thermal elements are configured to cause a reaction between two elements on the substrate.
 144. The system of claim 141, wherein the plurality of thermal elements are configured to crosslink two elements on the substrate.
 145. The system of claim 138, wherein the plurality of thermal elements are configured to modify a physical property of the substrate.
 146. The system of claim 145, wherein the plurality of thermal elements are configured to change a viscosity of the substrate.
 147. The system of claim 145, wherein the plurality of thermal elements are configured to change a strength of the substrate.
 148. The system of claim 145, wherein the plurality of thermal elements are configured to change a phase of the substrate.
 149. The system of claim 82, wherein the mold is configured to pattern at least one transistor element.
 150. The system of claim 82, wherein the mold is configured to pattern at least one element of an information storage device.
 151. The system of claim 82, wherein the mold is configured to pattern at least one element of a photonic device.
 152. The system of claim 82, wherein the mold is configured to pattern at least one component of an electromechanical system.
 153. A system for nanoimprinting a lithographic pattern into a mask on a substrate, the system comprising: a mold comprising a plurality of nanostructures, wherein the plurality of nanostructures are configured to form the lithographic pattern when imprinted into the mask; and a thermal element configured to alter a temperature of the mask, wherein the mask comprises a first substance with a first thermal diffusivity and a second substance with a second thermal diffusivity.
 154. The system of claim 153, wherein a first of the plurality of nanostructures is configured to imprint in the first substance and a second of the plurality of nanostructures is configured to imprint in the second substance.
 155. A method for nanoimprinting a lithographic pattern into a material, the method comprising: selecting a predetermined pulse time less than an equilibrium time for the material to reach thermal equilibrium; altering a temperature of a first section of the material smaller than the whole material for the predetermined pulse time; and imprinting a mold comprising a plurality of nanostructures into the material to form the lithographic pattern.
 156. The method of claim 155, wherein a spatial temperature profile of the first section is based on the predetermined pulse time.
 157. The method of claim 155, wherein a spatial profile of material at a same temperature value is based on the predetermined pulse time.
 158. The method of claim 155, wherein imprinting a mold comprises imprinting the mold to an imprint depth that substantially equals a material depth of the first section.
 159. The method of claim 155, wherein imprinting a mold comprises imprinting at least one nanostructure in the first section.
 160. The method of claim 155, wherein imprinting a mold comprises imprinting at least one nanostructure within a predetermined diffusion distance of the first section.
 161. The method of claim 155, wherein selecting a predetermined pulse time comprises selecting a predetermined pulse time less than an imprint time.
 162. The method of claim 155, wherein selecting a predetermined pulse time comprises selecting the predetermined pulse time based on a thermal diffusivity of the material.
 163. The method of claim 155, further comprising acquiring time dependent measurements of a property of the material using a sensor.
 164. The method of claim 163, wherein selecting a predetermined pulse time comprises selecting the predetermined pulse time based on the time dependent measurements.
 165. The method of claim 163, wherein acquiring time dependent measurements comprises measuring a temperature of the material.
 166. The method of claim 163, wherein acquiring time dependent measurements comprises monitoring an optical property of the material.
 167. The method of claim 163, wherein acquiring time dependent measurements comprises monitoring an electrical property of the material.
 168. The method of claim 155, wherein altering a temperature comprises altering the temperature using one of the plurality of nanostructures comprising a thermal element.
 169. The method of claim 155, wherein altering a temperature comprises altering the temperature using a thermal element thermally coupled to at least one of the plurality of nanostructures.
 170. The method of claim 155, wherein altering a temperature comprises altering the temperature of a thermal element thermally coupled to the first section of the material by at least one of the plurality of nanostructures.
 171. The method of claim 155, wherein altering a temperature comprises altering the temperature of the first section a plurality of times for a corresponding plurality of predetermined pulse times.
 172. The method of claim 155, wherein altering a temperature comprises delivering a sequence of thermal pulses, wherein each thermal pulse delivers heat to or removes heat from the first section, and wherein each thermal pulse lasts for a corresponding predetermined pulse time.
 173. The method of claim 172, wherein altering a temperature comprises: delivering heat for a predetermined heating time; and removing heat for a predetermined cooling time.
 174. The method of claim 173, further comprising separating the mold from the material, wherein altering a temperature comprises removing heat from the first section during separation.
 175. The method of claim 155, wherein selecting a predetermined pulse time comprises selecting the predetermined pulse time to create a predetermined spatial temperature profile in the material.
 176. The method of claim 155, wherein selecting a predetermined pulse time comprises selecting the predetermined pulse time to create a predetermined spatial temperature profile in the mold.
 177. The method of claim 155, wherein selecting a predetermined pulse time comprises selecting the predetermined pulse time to create a predetermined spatial profile of material at an operative temperature.
 178. The method of claim 155, wherein altering a temperature comprises delivering a predetermined amount of heat to the first section.
 179. The method of claim 155, wherein altering a temperature comprises removing a predetermined amount of heat from the first section.
 180. The method of claim 155, further comprising altering a temperature of a second section of the material smaller than the whole material.
 181. The method of claim 180, wherein altering the temperature of the first section and altering the temperature of the second section comprise creating a predetermined spatial temperature profile in the material.
 182. The method of claim 180, wherein altering the temperature of the first section and altering the temperature of the second section comprise creating a predetermined spatial temperature profile in the mold.
 183. The method of claim 180, wherein altering a temperature of a first section comprises delivering heat to the first section, and wherein altering a temperature of a second section comprises removing heat from the second section.
 184. The method of claim 180, wherein altering a temperature of a first section comprises delivering a first predetermined amount of heat to the first section, and wherein altering a temperature of a second section comprises delivering a second predetermined amount of heat to the second section.
 185. The method of claim 184, wherein altering a temperature of a first section comprises altering the temperature of the first section with a photoirradiation unit, and wherein altering a temperature of a second section comprises altering the temperature of the second section with the photoirradiation unit.
 186. The method of claim 185, wherein altering a temperature of a first section comprises generating a first pixel of radiation on the material, and wherein altering a temperature of a second section comprises generating a second pixel of radiation on the material.
 187. The method of claim 186, wherein generating a first pixel comprises passing radiation through a first portion of the mold with a first transparency, and wherein generating a second pixel comprises passing radiation through a second portion of the mold with a second transparency.
 188. The method of claim 186, further comprising cooling the material while the first and second pixels of radiation are produced on the material.
 189. The method of claim 185, wherein imprinting a mold comprises imprinting a mold transparent to radiation from the photoirradiation unit.
 190. The method of claim 155, wherein altering a temperature comprises heating the first section with a heating element for the predetermined pulse time.
 191. The method of claim 190, wherein heating the first section comprises heating the first section with a resistive heating element.
 192. The method of claim 190, wherein heating the first section comprises heating the first section with a photoheating element.
 193. The method of claim 192, wherein heating the first section comprises heating the first section with an ultraviolet light emitting element.
 194. The method of claim 192, wherein heating the first section comprises heating the first section with an x-ray emitting element.
 195. The method of claim 192, wherein imprinting a mold comprises imprinting a mold transparent to radiation from the photoheating element.
 196. The method of claim 190, further comprising cooling the material while the heating element heats the first section.
 197. The method of claim 155, wherein altering a temperature comprises removing heat from the first section with a cooling element for the predetermined pulse time.
 198. The method of claim 197, wherein removing heat from the first section comprises removing heat from the first section with a thermally conductive fluid.
 199. The method of claim 198, wherein removing heat from the first section comprises removing heat from the first section with water.
 200. The method of claim 197, wherein removing heat from the first section comprises removing heat from the first section with a heat sink.
 201. The method of claim 200, wherein removing heat with a heat sink comprises removing heat with a heat sink configured to change phase.
 202. The method of claim 201, wherein removing heat with a heat sink comprises removing heat with a heat sink configured to melt.
 203. The method of claim 201, wherein removing heat with a heat sink comprises removing heat with a heat sink configured to vaporize.
 204. The method of claim 197, wherein removing heat from the first section comprises removing heat from the first section with a cooling element thermally insulated from a heating element.
 205. The method of claim 197, further comprising heating the material while the cooling element removes heat from the first section.
 206. The method of claim 155, wherein altering a temperature comprises altering the temperature with a thermoelectric element.
 207. The method of claim 206, wherein altering the temperature with a thermoelectric element comprises heating the first section of the material.
 208. The method of claim 206, wherein altering the temperature with a thermoelectric element comprises cooling the first section of the material.
 209. The method of claim 206, wherein altering the temperature with a thermoelectric element comprises heating the first section of the material for a first time period and cooling the first section of the material for a second time period.
 210. The method of claim 206, wherein altering a temperature comprises altering the temperature with a thermoelectric element comprising a first semiconductor.
 211. The method of claim 210, wherein altering a temperature comprises altering the temperature with a thermoelectric element comprising a first doped semiconductor.
 212. The method of claim 211, wherein altering a temperature comprises altering the temperature with a thermoelectric element comprising a second doped semiconductor comprising excess electrons, and wherein the first doped semiconductor comprises excess electron holes.
 213. The method of claim 212, wherein altering a temperature comprises altering the temperature with a thermoelectric element further comprising: a first conductor coupled to the first doped semiconductor and a selectively operable power source; a second conductor coupled to the second doped semiconductor and the selectively operable power source; and a third conductor coupled to the first doped semiconductor and the second doped semiconductor.
 214. The method of claim 213, wherein altering a temperature comprises delivering power with a first polarity to heat the thermoelectric element and delivering power with a second polarity to cool the thermoelectric element.
 215. The method of claim 155, wherein imprinting a mold comprises imprinting the mold into a resist.
 216. The method of claim 215, wherein imprinting a mold comprises imprinting the mold into a mask.
 217. The method of claim 215, wherein imprinting a mold comprises imprinting the mold into a monomer.
 218. The method of claim 215, wherein imprinting a mold comprises imprinting the mold into a polymer.
 219. The method of claim 218, wherein imprinting a mold comprises imprinting the mold into a thermoplastic polymer.
 220. The method of claim 215, wherein imprinting a mold comprises imprinting the mold into a liquid curable under ultraviolet light.
 221. The method of claim 155, wherein imprinting a mold comprises imprinting the mold into a substrate.
 222. The method of claim 221, wherein imprinting a mold comprises imprinting the mold into silicon.
 223. The method of claim 221, wherein imprinting a mold comprises imprinting the mold into silicon dioxide.
 224. The method of claim 221, wherein altering a temperature comprises modifying a chemical property of the substrate.
 225. The method of claim 224, wherein modifying a chemical property comprises decomposing a substrate element.
 226. The method of claim 224, wherein modifying a chemical property comprises causing a reaction between two elements on the substrate.
 227. The method of claim 224, wherein modifying a chemical property comprises crosslinking two elements on the substrate.
 228. The method of claim 221, wherein altering a temperature comprises modifying a physical property of the substrate.
 229. The method of claim 228, wherein modifying a physical property comprises changing a viscosity of the substrate.
 230. The method of claim 228, wherein modifying a physical property comprises changing a strength of the substrate.
 231. The method of claim 228, wherein modifying a physical property comprises changing a phase of the substrate.
 232. The method of claim 155, wherein imprinting a mold comprises imprinting a pattern comprising at least one transistor element.
 233. The method of claim 155, wherein imprinting a mold comprises imprinting a pattern comprising at least one element of an information storage device.
 234. The method of claim 155, wherein imprinting a mold comprises imprinting a pattern comprising at least one element of a photonic device.
 235. The method of claim 155, wherein imprinting a mold comprises imprinting a pattern comprising at least one component of an electromechanical system.
 236. A method for nanoimprinting a lithographic pattern into a material, the method comprising: imprinting a mold comprising a plurality of nanostructures into the material to form the lithographic pattern; selectively altering a first temperature of a first nanostructure; and selectively altering a second temperature of a second nanostructure.
 237. The method of claim 236, further comprising acquiring time dependent measurements of a property of the material using a sensor.
 238. The method of claim 237, wherein selectively altering a first temperature comprises selectively altering the first temperature based on the time dependent measurements.
 239. The method of claim 237, wherein acquiring time dependent measurements comprises measuring a temperature of the material.
 240. The method of claim 237, wherein acquiring time dependent measurements comprises monitoring an optical property of the material.
 241. The method of claim 237, wherein acquiring time dependent measurements comprises monitoring an electrical property of the material.
 242. The method of claim 236, wherein selectively altering a first temperature comprises selectively altering the first temperature using a thermal element in the first nanostructure.
 243. The method of claim 236, wherein selectively altering a first temperature comprises selectively altering the first temperature using a thermal element thermally coupled to the first nanostructure.
 244. The method of claim 236, wherein selectively altering a first temperature comprises selectively altering the first temperature of a thermal element thermally coupled to the material by the first nanostructure.
 245. The method of claim 236, wherein altering a first temperature comprises altering the first temperature of the first nanostructure for a predetermined pulse time.
 246. The method of claim 245, further comprising an initial step of selecting the predetermined pulse time based on a thermal diffusivity of the material.
 247. The method of claim 246, wherein selecting a predetermined pulse time comprises selecting a predetermined pulse time less than an equilibrium time for the material to reach thermal equilibrium.
 248. The method of claim 245, wherein altering a first temperature comprises altering the first temperature of the first nanostructure a plurality of times for a corresponding plurality of predetermined pulse times.
 249. The method of claim 245, wherein altering a first temperature comprises delivering a sequence of thermal pulses, wherein each thermal pulse delivers heat to or removes heat from the first nanostructure, and wherein each thermal pulse lasts for a corresponding predetermined pulse time.
 250. The method of claim 249, wherein altering a first temperature comprises: delivering heat for a predetermined heating time; and removing heat for a predetermined cooling time.
 251. The method of claim 250, further comprising separating the mold from the material, wherein altering a first temperature comprises removing heat from the first nanostructure during separation.
 252. The method of claim 245, further comprising selecting the predetermined pulse time to create a predetermined spatial temperature profile.
 253. The method of claim 236, wherein altering the first temperature of the first nanostructure and altering the second temperature of the second nanostructure comprise creating a predetermined spatial temperature profile.
 254. The method of claim 236, wherein altering a first temperature of a first nanostructure comprises delivering a predetermined amount of heat to the first nanostructure.
 255. The method of claim 236, wherein altering a first temperature of a first nanostructure comprises removing a predetermined amount of heat from the first nanostructure.
 256. The method of claim 236, wherein altering a first temperature of a first nanostructure comprises delivering heat to the first nanostructure, and wherein altering a second temperature of a second nanostructure comprises removing heat from the second nanostructure.
 257. The method of claim 236, wherein altering a first temperature of a first nanostructure comprises delivering a first predetermined amount of heat to the first nanostructure, and wherein altering a second temperature of a second nanostructure comprises delivering a second predetermined amount of heat to the second nanostructure.
 258. The method of claim 257, wherein imprinting a mold comprises imprinting the mold into a material comprising a first substance with a first thermal diffusivity and a second substance with a second thermal diffusivity.
 259. The method of claim 258, wherein imprinting a mold comprises imprinting the first nanostructure in the first substance and imprinting the second nanostructure in the second substance.
 260. The method of claim 257, wherein altering a first temperature of a first nanostructure comprises generating a first pixel of radiation, and wherein altering a second temperature of a second nanostructure comprises generating a second pixel of radiation.
 261. The method of claim 236, wherein altering a first temperature of a first nanostructure comprises heating the first nanostructure with a heating element.
 262. The method of claim 261, wherein heating the first nanostructure comprises heating the first nanostructure with a resistive heating element.
 263. The method of claim 261, wherein heating the first nanostructure comprises heating the first nanostructure with a photoheating element.
 264. The method of claim 263, wherein heating the first nanostructure comprises heating the first nanostructure with an ultraviolet light emitting element.
 265. The method of claim 263, wherein heating the first nanostructure comprises heating the first nanostructure with an x-ray emitting element.
 266. The method of claim 263, wherein imprinting a mold comprises imprinting a mold transparent to radiation from the photoheating element.
 267. The method of claim 261, further comprising cooling the material while the heating element heats the first nanostructure.
 268. The method of claim 236, wherein altering a first temperature of a first nanostructure comprises removing heat from the first nanostructure with a cooling element.
 269. The method of claim 268, wherein removing heat from the first nanostructure comprises removing heat from the first nanostructure with a thermally conductive fluid.
 270. The method of claim 269, wherein removing heat from the first nanostructure comprises removing heat from the first nanostructure with water.
 271. The method of claim 268, wherein removing heat from the first nanostructure comprises removing heat from the first nanostructure with a heat sink.
 272. The method of claim 271, wherein removing heat with a heat sink comprises removing heat with a heat sink configured to change phase.
 273. The method of claim 272, wherein removing heat with a heat sink comprises removing heat with a heat sink configured to melt.
 274. The method of claim 272, wherein removing heat with a heat sink comprises removing heat with a heat sink configured to vaporize.
 275. The method of claim 268, wherein removing heat from the first nanostructure comprises removing heat from the first nanostructure with a cooling element thermally insulated from a heating element.
 276. The method of claim 268, further comprising heating the material while the cooling element removes heat from the first nanostructure.
 277. The method of claim 236, wherein altering a first temperature comprises altering the first temperature with a thermoelectric element.
 278. The method of claim 277, wherein altering the first temperature with a thermoelectric element comprises heating the material.
 279. The method of claim 277, wherein altering the first temperature with a thermoelectric element comprises cooling the material.
 280. The method of claim 277, wherein altering the first temperature with a thermoelectric element comprises heating the material for a first time period and cooling the material for a second time period.
 281. The method of claim 277, wherein altering a first temperature comprises altering the first temperature with a thermoelectric element comprising a first semiconductor.
 282. The method of claim 281, wherein altering a first temperature comprises altering the first temperature with a thermoelectric element comprising a first doped semiconductor.
 283. The method of claim 282, wherein altering a first temperature comprises altering the first temperature with a thermoelectric element comprising a second doped semiconductor comprising excess electrons, and wherein the first doped semiconductor comprises excess electron holes.
 284. The method of claim 283, wherein altering a first temperature comprises altering the first temperature with a thermoelectric element further comprising: a first conductor coupled to the first doped semiconductor and a selectively operable power source; a second conductor coupled to the second doped semiconductor and the selectively operable power source; and a third conductor coupled to the first doped semiconductor and the second doped semiconductor.
 285. The method of claim 284, wherein altering a first temperature comprises delivering power with a first polarity to heat the thermoelectric element and delivering power with a second polarity to cool the thermoelectric element.
 286. The method of claim 236, wherein imprinting a mold comprises imprinting the mold into a resist.
 287. The method of claim 286, wherein imprinting a mold comprises imprinting the mold into a mask.
 288. The method of claim 286, wherein imprinting a mold comprises imprinting the mold into a monomer.
 289. The method of claim 286, wherein imprinting a mold comprises imprinting the mold into a polymer.
 290. The method of claim 289, wherein imprinting a mold comprises imprinting the mold into a thermoplastic polymer.
 291. The method of claim 286, wherein imprinting a mold comprises imprinting the mold into a liquid curable under ultraviolet light.
 292. The method of claim 236, wherein imprinting a mold comprises imprinting the mold into a substrate.
 293. The method of claim 292, wherein imprinting a mold comprises imprinting the mold into silicon.
 294. The method of claim 292, wherein imprinting a mold comprises imprinting the mold into silicon dioxide.
 295. The method of claim 292, wherein altering a first temperature comprises modifying a chemical property of the substrate.
 296. The method of claim 295, wherein modifying a chemical property comprises decomposing a substrate element.
 297. The method of claim 295, wherein modifying a chemical property comprises causing a reaction between two elements on the substrate.
 298. The method of claim 295, wherein modifying a chemical property comprises crosslinking two elements on the substrate.
 299. The method of claim 292, wherein altering a first temperature comprises modifying a physical property of the substrate.
 300. The method of claim 299, wherein modifying a physical property comprises changing a viscosity of the substrate.
 301. The method of claim 299, wherein modifying a physical property comprises changing a strength of the substrate.
 302. The method of claim 299, wherein modifying a physical property comprises changing a phase of the substrate.
 303. The method of claim 236, wherein imprinting a mold comprises imprinting a pattern comprising at least one transistor element.
 304. The method of claim 236, wherein imprinting a mold comprises imprinting a pattern comprising at least one element of an information storage device.
 305. The method of claim 236, wherein imprinting a mold comprises imprinting a pattern comprising at least one element of a photonic device.
 306. The method of claim 236, wherein imprinting a mold comprises imprinting a pattern comprising at least one component of an electromechanical system.
 307. A method for nanoimprinting a lithographic pattern into a mask on a substrate, the method comprising: altering a temperature of the mask, wherein the mask comprises a first substance with a first thermal diffusivity and a second substance with a second thermal diffusivity; and imprinting a mold comprising a plurality of nanostructures into the mask to form the lithographic pattern.
 308. The method of claim 307, wherein imprinting a mold comprises imprinting a first of the plurality of nanostructures into the first substance and imprinting a second of the plurality of nanostructures into the second substance. 